2017, №2

сс. 68-80

Etching of Sapphire in Supercritical Water at Ultrahigh Temperatures and Pressures under the Conditions of Pulsed Laser Thermoplasmonics

2017, №2

сс. 68-80

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M.Yu. Tsvetkov, N.V. Minaev, A.A. Akovantseva, G.I. Pudovkina, P.S. Timashev, S.I. Tsypina, V.I. Yusupov, A.E. Muslimov, A.V. Butashin, V.M. Kanevsky, V.N. Bagratashvili

Key words: sapphire, laser backside wet etching, microstructuring, thermoplasmonic, supercritical water, ultrahigh pressures and temperatures

For effective and well-controlled microstructuring of sapphire, the method of
thermoplasmonic laser-induced backside wet etching (TPLIBWE) was applied. The
method is based on the generation of highly absorbing silver nanoparticles generated
in the course of the pulsed-periodic laser irradiation, which are formed as a result of
laser destruction of AgNO3, a silver precursor dissolved in water. The process of
sapphire etching is carried out by supercritical water at ultrahigh temperatures and
pressures substantially exceeding the critical values for water and formed at the
sapphire/water interface as a result of the absorption of laser pulses by silver
nanoparticles. The mechanism of TPLIBWE is considered, the etching rates reaching
∼100 nm/pulse are determined. The formation of aluminum nanoparticles is revealed,
which indicates the deep destruction of Al2O3 as a result of TPLIBWE.

doi:10.1134/S1990793117080127